IIT Hyderabad - Introduction to Semiconductor Devices 

Week-1 : Semiconductors in daily life, semiconducting material properties, energy levels in atoms, energy band formation, bandgap and material classification, electrons and holes, effective mass

Week-2 : Carrier properties – intrinsic carrier density, Fermi level, donor and acceptor impurities, Fermi level in extrinsic semiconductors, temperature dependence of carrier density, generation and recombination of carriers

Week-3 : Thermal motion of carriers, carriers under electric field, mobility and drift current, diffusion of carriers, general expression for current in a semiconductor, energy bands under electric fields

Week-4 : pn junction electrostatics, fixed and free charge, depletion approximation, electric field at the junction, built-in potential, step junction vs linearly graded junction, energy band diagram of a PN Junction and quasi-Fermi levels

Week-5 : pn junction under applied bias, minority carrier injection and spatial variation in depletion and quasi-neutral regions, band-bending under applied bias, ideal diode equation

Week-6 : Diode non-idealities, breakdown, depletion and diffusion capacitance, p-i-n Diode, Metal Semiconductor Junctions

Week-7 : Ideal MOS capacitor structure, Qualitative analysis of field effect, block charge, electric field and potential diagrams, energy band diagrams, Accumulation and inversion regimes, Gate voltage drop across a MOS device

Week-8 : Threshold voltage of a MOS device, Capacitance-Voltage(CV) measurements, HFCV and LFCV of a MOS capacitor, Non-idealities in a MOS capacitor – work function difference and flatland voltage, tunneling over gate barrier and leakage current, high-k gate dielectrics

Week-9 : Long Channel MOSFETs, energy band diagram and qualitative understanding of MOSFET operation, ID-VD and ID-VG relationships, square law theory of MOSFET, sub-threshold slope, performance metrics of a MOSFET

Week-10 : Technology scaling and Moore’s law, qualitative understanding of Short channel effects – velocity saturation, channel length modulation, drain induced barrier lowering (DIBL), differences in IV characteristics of long and short channel MOSFETs, overview of modern FETs (FinFETs, tunnel FETs and nanowire transistors)

Week-11 : Optoelectronic devices in daily life, III-V Semiconductors, direct and indirect bandgaps, optical absorption, pin photodetectors, solar cells, open circuit voltage and short circuit current

Week-12 : Light emitting devices – Heterostructures, LEDs and their luminescent efficiency, double heterostructure and population inversion, diode lasers, LI characteristics and threshold current