NPTEL - Physics of Nanoscale Devices
offered by IIT Roorkee

Public/Government Institute
Estd. 1847

Physics of Nanoscale Devices
at
IIT Roorkee
Overview

Gain a comprehensive overview of the Nanoscale Devices principles and concepts

Duration	12 weeks
Mode of learning	Online
Credential	Certificate

Physics of Nanoscale Devices
at
IIT Roorkee
Highlights

Earn a E- certificate of completion from IIT Roorkee

Physics of Nanoscale Devices
at
IIT Roorkee
Course details

Skills you will learn

Simulation Renewable Energy

Who should do this course?

For UG III/IV-year students in Electronics and Communication Engineering/ PG I year students in Microelectronics and VLSI

More about this course

This course will introduce senior undergraduate and beginner postgraduate students to the basic physics of novel miniaturized (mesoscopic and nanoscopic) devices
As the device size is reducing, electrons? behavior in these devices is changing drastically
The electrical properties of these devices need to be understood in a more fundamental way
The course would start from the basics of quantum mechanics and equip the students to delve into advanced topics in nanoscale devices

Physics of Nanoscale Devices
at
IIT Roorkee
Curriculum

Week 1

Introduction to nanoelectronics ? device scaling

How device physics is fundamentally different in mesoscopic and nano devices ? voltage drop, heat dissipation etc.

Necessity to understand and invoke quantum mechanics in nanoelectronics

Week 2

Introduction to quantum mechanics

Schrodinger equation

Free electron wavefunction

Particle/electron in a box, electrons in a solid

Week 3

Introduction to KP model

Brillouin Zones

KP model ? origin of energy bands in solids

Week 4

Density of states ? 0D, 1D, 2D, 3D conductors

Fermi function

The notion of modes in a conductor

Week 5

Conductance

Bottom-up approach

Landauer?s formalism

Ballistic and Diffusive transport ? transmission

Transition from ballistic to diffusive transport

Week 6

Introduction to MOSFET ? A barrier-controlled device

MOSFET electrostatics

Week 7

MOSFET 2D electrostatics

MOSFET Capacitance

Week 8

High-K dielectric

Strained Si technology

Quantum confinement in MOSFET

Week 9

ETSOI-MOSFET

Transport in MOSFET

Ballistic MOSFET

Week 10

Ballistic injection velocity in MOSFET

Thermoelectric effects and thermoelectric devices

Week 11

Quantum dot devices ? quantum capacitance

IV characteristics

Self-consistent method

Week 12

Introduction to ab initio simulation

NEGF

Summary of the entire course

Physics of Nanoscale Devices
at
IIT Roorkee
Faculty details

Prof. Vishvendra Singh Poonia

Dr. Vishvendra Singh Poonia is Assistant Professor in the Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee.