IIT Bombay Professor Saurabh Lodha wins Young Career Award 2020

Professor Saurabh Lodha from IIT Bombay Electrical engineering department has received the Young Career Award in Nano Science and Technology for the year 2020 introduced by the Department of Science and Technology (DST), Government of India. 

Professor Saurabh Lodha from IIT Bombay Electrical engineering department has received the Young Career Award in Nano Science and Technology for the year 2020 introduced by the Department of Science and Technology (DST), Government of India. 

He has been awarded for his exemplary contributions for the development of logic transistor technologies beyond silicon and nano-electronic devices based on two-dimensional Van der Waals materials, said Ministry of Science and Technology in a statement.

IIT Bombay Professor's recent innovation in the area of advanced transistors has been driven by strong industry partnerships. 

He has worked closely with Applied Materials Inc., one of the world's largest semiconductor equipment manufacturers, for the last eight years on technological challenges plaguing beyond-silicon transistors- the workhorse device that fuels over 90% of all electronics. 

Professor Lodha has developed new materials and processes to improve the thermal stability and reliability of the heart of the transistor- its thin gate dielectric, which will lower down the resistance of metal contacts to the transistor and will help to achieve higher levels of electrical impurities while keeping leakage currents under check, the statement added.

These innovations will help in making the future electronic devices such as mobile phones, servers, desktops, and laptops, to do their tasks faster, consume less power, and last longer with lower failure rates. 

Prof Lodha's work has not only been presented at top device conferences across the globe but has also been incorporated in semiconductor equipment for advanced transistor technologies. 

Prof. Lodha, an alumnus of IIT Bombay and Purdue University, USA, plans to leverage the capabilities and expertise in his group for developing power electronic transistors based on wide bandgap semiconductors such as silicon carbide and gallium oxide. 

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